ICP-RIE Plasma Etching System

This system efficiently generates stable, high-density plasma by employing a unique tornado-type coil electrode to enable high-precision anisotropic etching of silicon and various metal thin films and compound semiconductors.

Feature

Processing up to ø230 mm (ø3″ x 5, ø4″ x 3, ø8″ x 1)
A symmetrical evacuation design coupled to a TMP creates an efficient flow
An optimized gas manifolds to deliver process gas uniformly
Optional optical/interferometric endpoint detection system enables precise etch depth control over multiple process runs
ESC and He cooling of the stage and temperature control of the inner side wall of the reaction chamber allow etching under stable conditions

Specification

Item	Description
Vacuum System	RC: TMP (1300 L/sec) + Dry pump (1300 L/min)
Lower Electrode	Aluminum ø167 mm, ESC
ICP RF Power	13.56 MHz, Max. 1000 W
RF Power	13.56 MHz, max. 300 W
Gas Inlet Lines	Max. 12 lines
Work piece size	Max Ø4inch